i, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRFP450 n - channel 500v - 0.33q - 14a - to-247 powermesh? mosfet type IRFP450 vdss 500 v rds(on) < 0.4 n id 14 a . typical ros(on)= 0.33 q . extremely high dv/dt capability . 100% avalanche tested . very low intrinsic capacitances . gate charge minimized description this power mosfet is designed using the company's consolidated strip layout-based mesh overlay"1 process. this technology matches and improves the performances compared with standard parts from various sources. applications . high current switching . uninterruptible power supply (ups) . dc/dc coverters for telecom, industrial, and lighting equipment. to-247 internal schematic diagram absolute maximum ratings symbol vds vdgr vgs id id idm(-) plot dv/dt(i) tslg jj parameter drain-source voltage (vgs = 0) drain- gate voltage (ros = 20 kii) gate-source voltage drain current (continuous) at tc = 25 c drain current (continuous) at tc = 100 c drain current (pulsed) total dissipation at tc = 25 c derating factor peak diode recovery voltage slope storage temperature max. operating junction temperature value 500 500 20 14 8.7 56 190 1.5 3.5 -65 to 150 150 unit v v v a a a w w/c v/ns c c (?) pulse width limited by safe operating area (1) isd <14 a, di/dt < 130 a^is. vdd < v(br,oss. tj < tjmax nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
IRFP450 thermal rthj-case rthj-amb rthc-sink t . data thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 0.66 30 0.1 300 c/w oc/w c/w c avalanche characteristics symbol parameter iar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) eas single pulse avalanche energy (starting t, = 25 c, id = iar, vdd = 50 v) max value 14 800 unit a mj electrical characteristics (tcase = 25 c unless otherwise specified) off symbol parameter test conditions v(br)dss drain-source id = 250 na vgs = 0 breakdown voltage loss zero gate voltage vds = max rating drain current (vgs = 0) vds = max rating tc = 125 c loss gate-body leakage vgs = 20 v current (vos = 0) min. 500 typ. max. 1 50 100 unit v ua ma na on (*) symbol vos(th) rds(on) ld(on) parameter gate threshold voltage static drain-source on resistance on state drain current test conditions vds = vgs !d = 250ua vgs = 10v id = 8.4 a vds > ld(on) x rds(on)max vgs = 10 v min. 2 14 typ. 3 0.33 max. 4 0.4 unit v n a dynamic symbol parameter test conditions gts (*) forward vds > lo(on) x rosionjmax id = 8.4 a transcend uctance ciss input capacitance coss output capacitance crss reverse transfer capacitance vds = 25 v f = 1 mhz vgs = 0 min. 9.3 typ. 13 2600 330 40 max. unit s pf pf pf
IRFP450 electrical characteristics (continued) switching on symbol parameter td(on) turn-on time tr rise time qg total gate charge qgs gate-source charge qgd gate-drain charge test conditions vdd = 250 v id = 7a rg= 4.7 il vgs = 10 v (see test circuit, figure 1 ) vdd = 400 v id=14a vgs=10v min. typ. 24 14 75 13.5 27 max. unit ns ns nc nc nc switching off symbol parameter tr(voff) off-voltage rise time tf fall time tc cross-over time test conditions vdd = 400v id =14 a rg= 4.7 u vgs = 10 v (see test circuit, figure 3) min. typ. 15 25 35 max. unit ns ns ns source drain diode symbol parameter test conditions isd source-drain current isdm(') source-drain current (pulsed) vsd (*) forward on voltage trr reverse recovery time qrr reverse recovery charge irrm reverse recovery current isd = 14 a vgs = 0 isd = 14 a di/dt = 100 a/us vdd = 100 v tj = 150 c (see test circuit, figure 3) min. typ. 680 9 26 max. 14 56 1.4 unit a a v ns nc a (??) pulsed: pulse duration =300 us. duty cycle 1.5 % (?) pulse width limited by safe operating area safe operating area id w thermal impedance 10 ' tp(s)
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